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EN29LV160
EN29LV160 ******PRELIMINARY DRAFT******
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
* 3.0V, single power supply operation - Minimizes system level power requirements * High performance - Access times as fast as 70 ns * Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current - 1 A typical standby current (standard access time to active mode) * Flexible Sector Architecture: - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode) - One 8 Kword, two 4 Kword, one 16 Kword and thirty-one 32 Kword sectors (word mode) - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors. * High performance program/erase speed - Byte program time: 8s typical - Sector erase time: 500ms typical - Chip erase time: 17.5s typical * JEDEC Standard program and erase commands * JEDEC standard DATA polling and toggle bits feature * Single Sector and Chip Erase * Sector Unprotect Mode * Embedded Erase and Program Algorithms * Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode * 0.23 m triple-metal double-poly triple-well CMOS Flash Technology * Low Vcc write inhibit < 2.5V
* >100K program/erase endurance cycle
0.
* Package Options - 48-pin TSOP (Type 1) - 48 ball 6mm x 8mm FBGA * Commercial Temperature Range
GENERAL DESCRIPTION
The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8s. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems. The EN29LV160 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions 1 or modifications due to changes in technical specifications.
(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
CONNECTION DIAGRAMS
A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE# RESET# NC NC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# Vss DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 Vcc DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# Vss CE# A0
Standard TSOP
FBGA Top View, Balls Facing Down
A6 B6 C6 D6 E6 F6 G6 H6
A13
A12
A14
A15
A16
BYTE#
DQ15/A-1
Vss
A5
B5
C5
D5
E5
F5
G5
H5
A9 A4
A8 B4
A10 C4
A11 D4
DQ7 E4
DQ14 F4
DQ13 G4
DQ6 H4
WE#
RESET#
NC
A19
DQ5
DQ12
Vcc
DQ4
A3 RY/BY# A2
B3 NC B2
C3 A18 C2
D3 NC D2
E3 DQ2 E2
F3 DQ10 F2
G3 DQ11 G2
H3 DQ3 H2
A7 A1
A17 B1
A6 C1
A5 D1
DQ0 E1
DQ8 F1
DQ9 G1
DQ1 H1
A3
A4
A2
A1
A0
CE#
OE#
Vss
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
TABLE 1. PIN DESCRIPTION
Pin Name A0-A19 DQ0-DQ14 DQ15 / A-1 CE# OE# RESET# RY/BY# WE# Vcc Vss NC BYTE# Function 20 Addresses 15 Data Inputs/Outputs DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode) Chip Enable Output Enable Hardware Reset Pin Ready/Busy Output Write Enable Supply Voltage (2.7-3.6V) Ground Not Connected to anything Byte/Word Mode
FIGURE 1. LOGIC DIAGRAM
EN29LV160
A0 - A19
DQ0 - DQ15 (A-1)
Reset CE OE WE Byte RY/BY
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Rev. A, Issue Date: 2004/03/30
EN29LV160
Table 2. Sector Address Tables (EN29LV160T)
Sector Size (Kbytes/ Kwords) 62/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 32/16 8/4 8/4 16/8 Address Range (in hexadecimal) Byte mode (x8) 000000-00FFFF 010000-01FFFF 020000-02FFFF 030000-03FFFF 040000-04FFFF 050000-05FFFF 060000-06FFFF 070000-07FFFF 080000-08FFFF 090000-09FFFF 0A0000-0AFFFF 0B0000-0BFFFF 0C0000-0CFFFF 0D0000-0DFFFF 0E0000-0EFFFF 0F0000-0FFFFF 100000-10FFFF 110000-11FFFF 120000-12FFFF 130000-13FFFF 140000-14FFFF 150000-15FFFF 160000-16FFFF 170000-17FFFF 180000-18FFFF 190000-19FFFF 1A0000-1AFFFF 1B0000-1BFFFF 1C0000-1CFFFF 1D0000-1DFFFF 1E0000-1EFFFF 1F0000-1F7FFF 1F8000-1F9FFF 1FA000-1FBFFF 1FC000-1FFFFF Word Mode (x16) 00000-07FFF 08000-0FFFF 10000-17FFF 18000-1FFFF 20000-27FFF 28000-2FFFF 30000-37FFF 38000-3FFFF 40000-47FFF 48000-4FFFF 50000-57FFF 58000-5FFFF 60000-67FFF 68000-6FFFF 70000-77FFF 78000-7FFFF 80000-87FFF 88000-8FFFF 90000-97FFF 98000-9FFFF A0000-A7FFF A8000-AFFFF B0000-B7FFF B8000-BFFFF C0000-C7FFF C8000-CFFFF D0000-D7FFF D8000-DFFFF E0000-E7FFF E8000-EFFFF F0000-F7FFF F8000-FBFFF FC000-FCFFF FD000-FDFFF FE000-FFFFF
Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34
A19 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
A18 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1
A17 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1
A16 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 1 1
A15 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 1 1
A14 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 1 1 1
A13 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 0 1
A12 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 1 X
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Rev. A, Issue Date: 2004/03/30
EN29LV160
Table 3. Sector Address Tables (EN29LV160B)
Sector Size (Kbytes/ Kwords) 16/8 8/4 8/4 32/16 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 Address Range (in hexadecimal) Byte mode (x8) 000000-003FFF 004000-005FFF 006000-007FFF 008000-00FFFF 010000-01FFFF 020000-02FFFF 030000-03FFFF 040000-04FFFF 050000-05FFFF 060000-06FFFF 070000-07FFFF 080000-08FFFF 090000-09FFFF 0A0000-0AFFFF 0B0000-0BFFFF 0C0000-0CFFFF 0D0000-0DFFFF 0E0000-0EFFFF 0F0000-0FFFFF 100000-10FFFF 110000-11FFFF 120000-12FFFF 130000-13FFFF 140000-14FFFF 150000-15FFFF 160000-16FFFF 170000-17FFFF 180000-18FFFF 190000-19FFFF 1A0000-1AFFFF 1B0000-1BFFFF 1C0000-1CFFFF 1D0000-1DFFFF 1E0000-1EFFFF 1F0000-1FFFFF Word Mode (x16) 00000-01FFF 02000-02FFF 03000-03FFF 04000-07FFF 08000-0FFFF 10000-17FFF 18000-1FFFF 20000-27FFF 28000-2FFFF 30000-37FFF 38000-3FFFF 40000-47FFF 48000-4FFFF 50000-57FFF 58000-5FFFF 60000-67FFF 68000-6FFFF 70000-77FFF 78000-7FFFF 80000-87FFF 88000-8FFFF 90000-97FFF 98000-9FFFF A0000-A7FFF A8000-AFFFF B0000-B7FFF B8000-BFFFF C0000-C7FFF C8000-CFFFF D0000-D7FFF D8000-DFFFF E0000-E7FFF E8000-EFFFF F0000-F7FFF F8000-FFFFF
Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34
A19 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
A18 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1
A17 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1
A16 0 0 0 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1
A15 0 0 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1
A14 0 0 0 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X
A13 0 1 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X
A12 X 0 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Rev. A, Issue Date: 2004/03/30
EN29LV160
PRODUCT SELECTOR GUIDE
Product Number Speed Option Regulated Voltage Range: Vcc=3.0 - 3.6 V Full Voltage Range: Vcc=2.7 - 3.6 V -70 70 70 30 EN29LV160 -90 90 90 35
Max Access Time, ns (tacc) Max CE# Access, ns (tce) Max OE# Access, ns (toe)
BLOCK DIAGRAM
Vcc Vss
RY/BY
Block Protect Switches
DQ0-DQ15 (A-1)
Erase Voltage Generator State Control Program Voltage Generator Chip Enable Output Enable Logic
STB
Input/Output Buffers
WE
Command Register CE OE
Data Latch
Y-Decoder Address Latch
STB
Y-Gating
Vcc Detector
Timer
X-Decoder
Cell Matrix
A0-A19
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
TABLE 3. OPERATING MODES 16M FLASH USER MODE TABLE
A0A19 AIN AIN X X X X AIN DQ8-DQ15 Byte# Byte# = VIL = VIH DOUT High-Z DIN High-Z High-Z High-Z High-Z High-Z High-Z High-Z High-Z High-Z DIN X
Operation Read Write CMOS Standby TTL Standby Output Disable Hardware Reset Temporary Sector Unprotect
CE# L L Vcc 0.3V H L X X
OE# L H X X H X X
WE# H L X X H X X
Reset# H H Vcc 0.3V H H L VID
DQ0-DQ7 DOUT DIN High-Z High-Z High-Z High-Z DIN
Notes: L=logic low= VIL, H=Logic High= VIH, VID =11 0.5V, X=Don't Care (either L or H, but not floating!), DIN=Data In, DOUT=Data Out, AIN=Address In
TABLE 4. DEVICE IDENTIFICTION (Autoselect Codes)
16M FLASH MANUFACTURER/DEVICE ID TABLE
Description Mode CE L L L L L L OE L L L L L L WE H H H H H H A19 to A12 X X X A11 to A10 X X X A9
2
A8
A7
A6
A5 to A2 X X X
A1
A0
DQ8 to DQ15 X 22h X 22h X X X
DQ7 to DQ0 1CH C4H C4H 49H 49H 01h
(Protected)
Manufacturer ID: Eon Device ID Word
(top boot block)
VID VID VID
H
1
X X X
L L L
L L L
L H H
Byte Word Byte
X X
Device ID
(bottom boot block)
Sector Protection Verification
SA
X
VID
X
X
L
X
H
L
00h
(Unprotected)
Note: 1. A8=H is recommended for Manufacturing ID check. If a manufacturing ID is read with A8=L, the chip will output a configuration code 7Fh 2. A9 = VID is for HV A9 Autoselect mode only. A9 must be Vcc (CMOS logic level) for Command Autoselect Mode.
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Rev. A, Issue Date: 2004/03/30
EN29LV160 USER MODE DEFINITIONS
Word / Byte Configuration
The signal set on the BYTE# Pin controls whether the device data I/O pins DQ15-DQ0 operate in the byte or word configuration. When the Byte# Pin is set at logic `1', then the device is in word configuration, DQ15-DQ0 are active and are controlled by CE# and OE#. On the other hand, if the Byte# Pin is set at logic `0', then the device is in byte configuration, and only data I/O pins DQ0-DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function.
Standby Mode
The EN29LV160 has a CMOS-compatible standby mode, which reduces the current to < 1A (typical). It is placed in CMOS-compatible standby when the CE pin is at VCC 0.5. RESET# and BYTE# pin must also be at CMOS input levels. The device also has a TTL-compatible standby mode, which reduces the maximum VCC current to < 1mA. It is placed in TTL-compatible standby when the CE pin is at VIH. When in standby modes, the outputs are in a high-impedance state independent of the OE input.
Read Mode
The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See "Erase Suspend/Erase Resume Commands" for more additional information. The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high, or while in the autoselect mode. See the "Reset Command" additional details.
Output Disable Mode
When the CE or OE pin is at a logic high level (VIH), the output from the EN29LV160 is disabled. The output pins are placed in a high impedance state.
Auto Select Identification Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ15-DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID (10.5 V to 11.5 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in Autoselect Codes table. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits. Refer to the corresponding Sector Address Tables. The Command Definitions table shows the remaining address bits that are don't-care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ15-DQ0.
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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EN29LV160
To access the autoselect codes in-system; the host system can issue the autoselect command via the command register, as shown in the Command Definitions table. This method does not require VID. See "Command Definitions" for details on using the autoselect mode.
Write Mode
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. The Command Definitions in Table 5 show the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using DQ7 or DQ6. See "Write Operation Status" for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a "0" back to a "1". Attempting to do so may halt the operation and set DQ5 to "1", or cause the Data# Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still "0". Only erase operations can convert a "0" to a "1".
Sector Protection/Unprotection
The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors.
There are two methods to enabling this hardware protection circuitry. The first one requires only that the RESET# pin be at VID and then standard microprocessor timings can be used to enable or disable this feature. See Flowchart 7a and 7b for the algorithm and Figure 12 for the timings. When doing Sector Unprotect, all the other sectors should be protected first. The second method is meant for programming equipment. This method requires VID be applied to both OE# and A9 pin and non-standard microprocessor timings are used. This method is described in a separate document called EN29LV160 Supplement, which can be obtained by contacting a
representative of Eon Silicon Solution, Inc.
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sector groups to change data while in-system. The Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by simply selecting the sector addresses. Once is removed from the RESET# pin, all the previously protected sectors are protected again. See accompanying figure and timing diagrams for more details.
Start Reset#=VID (note 1) Perform Erase or Program Operations Reset#=VIH Temporary Sector Unprotect Completed (note 2)
COMMON FLASH MEMORY INTERFACE (CFI)
Notes: 1. All protected sectors unprotected. 2. Previously protected sectors protected again.
The common flash interface (CFI) specification outlines device and host systems software interrogation handshake,
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
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EN29LV160
then be device-independent, JEDEC IDindependent, and forward- and backwardcompatible for the specified flash device families. Flash vendirs can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses given in Tables 5-8. In word mode, the upper address bits (A7-MSB) must be all zeros. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode and the system can read CFI data at the addresses given in Tables 5-8. The system must write the reset command to return the device to the autoselect mode.
Table 5. CFI Query Identification String
Adresses (Word Mode) 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah Adresses (Byte Mode) 20h 22h 24h 26h 28h 2Ah 2Ch 2Eh 30h 32h 34h Data 0051h 0052h 0059h 0002h 0000h 0040h 0000h 0000h 0000h 0000h 0000h Description Query Unique ASCII string "QRY" Primary OEM Command Set Address for Primary Extended Table Alternate OEM Command set (00h = none exists) Address for Alternate OEM Extended Table (00h = none exists
Table 6. System Interface String
Addresses (Word Mode) 1Bh 1Ch 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h Addresses (Byte Mode) 36h 38h 3Ah 3Ch 3Eh 40h 42h 44h 46h 48h 4Ah 4Ch Data 0027h 0036h 0000h 0000h 0004h 0000h 000Ah 0000h 0005h 0000h 0004h 0000h Description Vcc Min (write/erase) D7-D4: volt, D3 -D0: 100 millivolt Vcc Max (write/erase) D7-D4: volt, D3 -D0: 100 millivolt Vpp Min. voltage (00h = no Vpp pin present) Vpp Max. voltage (00h = no Vpp pin present) Typical timeout per single byte/word write 2^N s Typical timeout for Min, size buffer write 2^N s (00h = not supported) Typical timeout per individual block erase 2^N ms Typical timeout for full chip erase 2^N ms (00h = not supported) Max. timeout for byte/word write 2^N times typical Max. timeout for buffer write 2^N times typical Max. timeout per individual block erase 2^N times typical Max timeout for full chip erase 2^N times typical (00h = not supported)
Table 7. Device Geometry Definition
Addresses (Word mode) 27h Addresses (Byte Mode) 4Eh Data 0015h Description Device Size = 2^N byte
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This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2004/03/30
EN29LV160
28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch 50h 52h 54h 56h 58h 5Ah 5Ch 5Eh 60h 62h 64h 66h 68h 6Ah 6Ch 6Eh 70h 72h 74h 76h 78h 0002h 0000h 0000h 0000h 0004h 0000h 0000h 0040h 0000h 0001h 0000h 0020h 0000h 0000h 0000h 0080h 0000h 001Eh 0000h 0000h 0001h Flash Device Interface description (refer to CFI publication 100) Max. number of byte in multi-byte write = 2^N (00h = not supported) Number of Erase Block Regions within device Erase Block Region 1 Information (refer to the CFI specification of CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
Table 8. Primary Vendor-specific Extended Query
Adresses (Word Mode) 40h 41h 42h 43h 44h 45h 46h 47h 48h 49h 4Ah 4Bh 4Ch Addresses (Byte Mode) 80h 82h 84h 86h 88h 8Ah 8Ch 8Eh 90h 92h 94h 96h 98h Data 0050h 0052h 0049h 0031h 0030h 0000h 0002h 0001h 0001h 0004h 0000h 0000h 0000h Description Query-unique ASCII string "PRI" Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock 0 = Required, 1 = Not Required Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write Sector Protect 0 = Not Supported, X = Number of sectors in per group Sector Temporary Unprotect 00 = Not Supported, 01 = Supported Sector Protect/Unprotect scheme 01 = 29F040 mode, 02 = 29F016 mode, 03 = 29F400 mode, 04 = 29LV800A mode Simultaneous Operation 00 = Not Supported, 01 = Supported Burst Mode Type 00 = Not Supported, 01 = Supported Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Rev. A, Issue Date: 2004/03/30
EN29LV160 Hardware Data protection
The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes as seen in the Command Definitions table. Additionally, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by false system level signals during Vcc power up and power down transitions, or from system noise.
Low VCC Write Inhibit
When Vcc is less than VLKO, the device does not accept any write cycles. This protects data during Vcc power up and power down. The command register and all internal program/erase circuits are disabled, and the device resets. Subsequent writes are ignored until Vcc is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when Vcc is greater than VLKO.
Write Pulse "Glitch" protection
Noise pulses of less than 5 ns (typical) on OE , CE or W E do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE = VIL, CE = VIH, or W E = VIH. To initiate a write cycle, CE and W E must be a logical zero while OE is a logical one. If CE , W E , and OE are all
logical zero (not recommended usage), it will be considered a read.
Power-up Write Inhibit
During power-up, the device automatically resets to READ mode and locks out write cycles. Even with CE = VIL, W E = VIL and OE = VIH, the device will not accept commands on the rising edge of WE.
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Rev. A, Issue Date: 2004/03/30
EN29LV160 COMMAND DEFINITIONS
The operations of the EN29LV160 are selected by one or more commands written into the command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data sequences written at specific addresses via the command register. The sequences for the specified operation are defined in the Command Definitions table (Table 5). Incorrect addresses, incorrect data values or improper sequences will reset the device to Read Mode.
Table 9. EN29LV160 Command Definitions
Bus Cycles Command Sequence Read Reset Manufacturer ID Autoselect Device ID Top Boot Device ID Bottom Boot Sector Protect Verify Program Word 4 Byte Word Byte Word Byte Word 4 Byte 4 3 2 2 6 6 1 1 AAA 555 AAA 555 AAA XXX XXX 555 AAA 555 AAA xxx xxx AA AA A0 90 AA AA B0 30 4 4 AAA 555 AAA 555 AAA 555 AA 555 2AA 555 2AA 555 PA XXX 2AA 555 2AA 555 55 55 PD 00 55 55 555 AAA 555 AAA 80 80 555 AAA 555 AAA AA AA 2AA 555 2AA 555 55 55 555 AAA SA 10 30 AA AA
Cycles
1 RA xxx 555
st
2 RD F0 2AA AA 555 2AA 555 2AA 555 2AA
nd
3
rd
4
th
5
th
6
th
Write Cycle Add Data
Write Cycle Add Data
Write Cycle Add Data
Write Cycle Add Data
Write Cycle Add Data
Write Cycle Add Data
1 1
555 55 AAA 55 55 555 AAA 555 AAA 555 55 AAA 555 AAA 555 AAA A0 20 90 90 90 90
000/ 100 000/ 200 x01 x02 x01 x02 (SA) X02 (SA) X04 PA
7F/ 1C 7F/ 1C
22C4
C4 2249 49 XX00 XX01 00 01 PD
Word Byte Word Unlock Bypass Byte Unlock Bypass Program Unlock Bypass Reset Word Chip Erase Byte Word Sector Erase Byte Erase Suspend Erase Resume
Address and Data values indicated in hex RA = Read Address: address of the memory location to be read. This is a read cycle. RD = Read Data: data read from location RA during Read operation. This is a read cycle. PA = Program Address: address of the memory location to be programmed. X = Don't-Care PD = Program Data: data to be programmed at location PA SA = Sector Address: address of the Sector to be erased or verified. Address bits A19-A12 uniquely select any Sector.
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to retrieve data. The device is also ready to read array data after completing an Embedded Program or Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read array data using the standard read timings, with the only difference in that if it reads at an address within erase suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception.
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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The Reset command must be issued to re-enable the device for reading array data if DQ5 goes high, or while in the autoselect mode. See next section for details on Reset.
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are don'tcare for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during Erase Suspend). If DQ5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. The Command Definitions table shows the address and data requirements. This is an alternative to the method that requires VID on address bit A9 and is intended for PROM programmers. Two unlock cycles followed by the autoselect command initiate the autoselect command sequence. Autoselect mode is then entered and the system may read at addresses shown in Table 4 any number of times, without needing another command sequence. The system must write the reset command to exit the autoselect mode and return to reading array data.
Word / Byte Programming Command
The device may be programmed by byte or by word, depending on the state of the Byte# Pin. Programming the EN29LV160 is performed by using a four bus-cycle operation (two unlock write cycles followed by the Program Setup command and Program Data Write cycle). When the program command is executed, no additional CPU controls or timings are necessary. An internal timer terminates the program operation automatically. Address is latched on the falling edge of CE or W E , whichever is last; data is latched on the rising edge of CE or W E , whichever is first. Programming status may be checked by sampling data on DQ7 (DATA polling) or on DQ6 (toggle bit). ). When the program operation is successfully completed, the device returns to read mode and the user can read the data programmed to the device at that address. Note that data can not be programmed from a 0 to a 1. Only an erase operation can change a data from 0 to 1. When programming time limit is exceeded, DQ5 will produce a logical "1" and a Reset command can return the device to Read mode.
Unlock Bypass
To speed up programming operation, the Unlock Bypass Command may be used. Once this feature is activated, the shorter two cycle Unlock Bypass Program command can be used instead of the normal four cycle Program Command to program the device. This mode is exited after issuing the Unlock Bypass Reset Command. The device powers up with this feature disabled.
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Chip Erase Command
Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. The Command Definitions table shows the address and data requirements for the chip erase command sequence. Any commands written to the chip during the Embedded Chip Erase algorithm are ignored. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. See "Write Operation Status" for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. Flowchart 4 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in "AC Characteristics" for parameters, and to the Chip/Sector Erase Operation Timings for timing waveforms.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two un-lock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. The Command Definitions table shows the address and data requirements for the sector erase command sequence. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. Refer to "Write Operation Status" for information on these status bits. Flowchart 4 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the "AC Characteristics" section for parameters, and to the Sector Erase Operations Timing diagram for timing waveforms.
Erase Suspend / Resume Command
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Addresses are don't-cares when writing the Erase Suspend command. When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 20 s to suspend the erase operation. After the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (The device "erase suspends" all sectors selected for erasure.) Normal read and write timings and command definitions apply. Reading at any address within erasesuspended sectors produces status data on DQ7-DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See "Write Operation Status" for information on these status bits. After an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the
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DQ7 or DQ6 status bits, just as in the standard program operation. See "Write Operation Status" for more information. The Autoselect command is not supported during Erase Suspend Mode. The system must write the Erase Resume command (address bits are don't-care) to exit the erase suspend mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the device has resumed erasing.
WRITE OPERATION STATUS
DQ7 DATA Polling
The EN29LV160 provides DATA Polling on DQ7 to indicate to the host system the status of the embedded operations. The DATA Polling feature is active during the Byte Programming, Sector Erase, Chip Erase, Erase Suspend. (See Table 6) When the Byte Programming is in progress, an attempt to read the device will produce the complement of the data last written to DQ7. Upon the completion of the Byte Programming, an attempt to read the device will produce the true data last written to DQ7. For the Byte Programming, DATA polling is valid after the rising edge of the fourth WE or C E pulse in the four-cycle sequence. When the embedded Erase is in progress, an attempt to read the device will produce a "0" at the DQ7 output. Upon the completion of the embedded Erase, the device will produce the "1" at the DQ7 output during the read. For Chip Erase, the DATA polling is valid after the rising edge of the sixth W E or CE pulse in the six-cycle sequence. For Sector Erase, DATA polling is valid after the last rising edge of the sector erase W E or C E pulse.
DATA Polling must be performed at any address within a sector that is being programmed or erased and not a protected sector. Otherwise, DATA polling may give an inaccurate result if the address used is in a protected sector.
Just prior to the completion of the embedded operations, DQ7 may change asynchronously when the output enable ( OE ) is low. This means that the device is driving status information on DQ7 at one instant of time and valid data at the next instant of time. Depending on when the system samples the DQ7 output, it may read the status of valid data. Even if the device has completed the embedded operations and DQ7 has a valid data, the data output on DQ0-DQ6 may be still invalid. The valid data on DQ0-DQ7 will be read on the subsequent read attempts. The flowchart for DATA Polling (DQ7) is shown on Flowchart 5. The DATA Polling (DQ7) timing diagram is shown in Figure 8.
RY/BY: Ready/Busy
The RY/BY is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY status is valid after the rising edge of the final WE pulse in the command sequence. Since RY/BY is an open-drain output, several RY/BY pins can be tied together in parallel with a pull-up resistor to Vcc. In the output is low, signifying Busy, the device is actively erasing or programming. This includes programming in the Erase Suspend mode. If the output is high, signifying the Ready, the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode.
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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DQ6 Toggle Bit I
The EN29LV160 provides a "Toggle Bit" on DQ6 to indicate to the host system the status of the embedded programming and erase operations. (See Table 6) During an embedded Program or Erase operation, successive attempts to read data from the device at any address (by toggling OE or CE ) will result in DQ6 toggling between "zero" and "one". Once the embedded Program or Erase operation is complete, DQ6 will stop toggling and valid data will be read on the next successive attempts. During Byte Programming, the Toggle Bit is valid after the rising edge of the fourth WE pulse in the four-cycle sequence. For Chip Erase, the Toggle Bit is valid after the rising edge of the sixth-cycle sequence. For Sector Erase, the Toggle Bit is valid after the last rising edge of the Sector Erase W E pulse. In Byte Programming, if the sector being written to is protected, DQ6 will toggles for about 2 s, then stop toggling without the data in the sector having changed. In Sector Erase or Chip Erase, if all selected blocks are protected, DQ6 will toggle for about 100 s. The chip will then return to the read mode without changing data in all protected blocks. Toggling either CE or OE will cause DQ6 to toggle. The flowchart for the Toggle Bit (DQ6) is shown in Flowchart 6. The Toggle Bit timing diagram is shown in Figure 9.
DQ5 Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a "1." This is a failure condition that indicates the program or erase cycle was not successfully completed. Since it is possible that DQ5 can become a 1 when the device has successfully completed its operation and has returned to read mode, the user must check again to see if the DQ6 is toggling after detecting a "1" on DQ5. The DQ5 failure condition may appear if the system tries to program a "1" to a location that is previously programmed to "0." Only an erase operation can change a "0" back to a "1." Under this condition, the device halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a "1." Under both these conditions, the system must issue the reset command to return the device to reading array data.
DQ3 Sector Erase Timer
After writing a sector erase command sequence, the output on DQ3 can be used to determine whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase command.) When sector erase starts, DQ3 switches from "0" to "1." This device does not support multiple sector erase command sequences so it is not very meaningful since it immediately shows as a "1" after the first 30h command. Future devices may support this feature.
DQ2 Erase Toggle Bit II
The "Toggle Bit" on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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status bits are required for sector and mode information. Refer to Table 5 to compare outputs for DQ2 and DQ6. Flowchart 6 shows the toggle bit algorithm, and the section "DQ2: Toggle Bit" explains the algorithm. See also the "DQ6: Toggle Bit I" subsection. Refer to the Toggle Bit Timings figure for the toggle bit timing diagram. The DQ2 vs. DQ6 figure shows the differences between DQ2 and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Flowchart 6 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7-DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, a system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7-DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Flowchart 6).
Write Operation Status
Operation Standar d Mode Embedded Program Algorithm Embedded Erase Algorithm Reading within Erase Suspended Sector Reading within Non-Erase Suspended Sector Erase-Suspend Program DQ7 DQ7# 0 1 Data DQ7# DQ6 Toggle Toggle No Toggle Data Toggle DQ5 0 0 0 Data 0 DQ3 N/A 1 N/A Data N/A DQ2 No toggle Toggle Toggle Data N/A RY/BY # 0 0 1 1 0
Erase Suspend Mode
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Table 10. Status Register Bits
DQ Name Logic Level `1' `0' 7 POLLING Definition Erase Complete or erase Sector in Erase suspend Erase On-Going Program Complete or data of non-erase Sector during Erase Suspend Program On-Going Erase or Program On-going Read during Erase Suspend Erase Complete Program or Erase Error Program or Erase On-going Erase operation start Erase timeout period on-going Chip Erase, Erase or Erase suspend on currently addressed Sector. (When DQ5=1, Erase Error due to currently addressed Sector. Program during Erase Suspend ongoing at current address Erase Suspend read on non Erase Suspend Sector
DATA
DQ7 DQ7# `-1-0-1-0-1-0-1-' DQ6 `-1-1-1-1-1-1-1-`
6
TOGGLE BIT
5 3
ERROR BIT ERASE TIME BIT
`1' `0' `1' `0'
2
TOGGLE BIT
`-1-0-1-0-1-0-1-'
DQ2
Notes: DQ7 DATA
Polling: indicates the P/E status check during Program or Erase, and on completion before checking bits DQ5 for Program or Erase Success. DQ6 Toggle Bit: remains at constant level when P/E operations are complete or erase suspend is acknowledged. Successive reads output complementary data on DQ6 while programming or Erase operation are on-going. DQ5 Error Bit: set to "1" if failure in programming or erase
DQ3 Sector Erase Command Timeout Bit: Operation has started. Only possible command is Erase suspend (ES). DQ2 Toggle Bit: indicates the Erase status and allows identification of the erased Sector.
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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EN29LV160 EMBEDDED ALGORITHMS
Flowchart 1. Embedded Program
START
Write Program Command Sequence (shown below)
Data Poll Device
Verify Data?
Increment Address
No
Last Address? Yes Programming Done
Flowchart 2. Embedded Program Command Sequence
See the Command Definitions section for more information.
555H / AAH
2AAH / 55H
555H / A0H
PROGRAM ADDRESS / PROGRAM DATA
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Flowchart 3. Embedded Erase
START
Write Erase Command Sequence
Data Poll from System or Toggle Bit successfully completed
Data =FFh? No Yes Erase Done
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Flowchart 4. Embedded Erase Command Sequence
See the Command Definitions section for more information.
Chip Erase
Sector Erase 555H/AAH
555H/AAH
2AAH/55H
2AAH/55H
555H/80H
555H/80H
555H/AAH
555H/AAH
2AAH/55H
2AAH/55H
555H/10H
Sector Address/30H
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Flowchart 5. DATA Polling Algorithm
Start
Read Data
DQ7 = Data? No No DQ5 = 1? Yes Read Data (1)
Yes
Notes: (1) This second read is necessary in case the first read was done at the exact instant when the status data was in transition.
DQ7 = Data? No Fail
Yes
Pass
Flowchart 6. Toggle Bit Algorithm
Start
Read Data twice
DQ6 = Toggle? Yes No DQ5 = 1? Yes Read Data twice (2)
No
Notes: (1) This second set of reads is necessary in case the first set of reads was done at the exact instant when the status data was in transition.
DQ6 = Toggle? Yes Fail
No
Pass
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Flowchart 7a. In-System Sector Protect Flowchart
START PLSCNT = 1 RESET# = VID Wait 1 s
No Temporary Sector Unprotect Mode
First Write Cycle = 60h? Yes Set up sector address
Sector Protect: Write 60h to sector addr with A6 = 0, A1 = 1, A0 = 0
Wait 150 s Verify Sector Protect: Write 40h to sector address with A6 = 0, A1 = 1, A0 = 0 Increment PLSCNT Wait 0.4 s Reset PLSCNT = 1
No No
Read from sector address with A6 = 0, A1 = 1, A0
PLSCNT = 25?
Data = 01h? Yes
Yes
Device failed Protect another sector? No Remove VID from RESET# Write reset command Yes
Sector Protect Algorithm
Sector Protect complete
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Flowchart 7b. In-System Sector Unprotect Flowchart
START
PLSCNT = 1 Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address (see Diagram 7a.) RESET# = VID Wait 1 S
No First Write Cycle = 60h? Yes No All sectors protected? Yes Set up first sector address Sector Unprotect: Write 60H to sector address with A6 = 1, A1 = 1, A0 = 0
Temporary Sector Unprotect Mode
Wait 15 ms
Increment PLSCNT
Verify Sector Unprotect: Write 40h to sector address with A6 = 1, A1 = 1, A0 =0
Wait 0.4 S
No
Read from sector address with A6 = 1, A1 = 1, A0 = 0
PLSCCNT = 1000?
No
Data = 00h? Yes No
Set up next sector address
Sector Unprotect Algorithm
Yes Device failed
Last sector verified? Yes Remove VID from RESET#
Write reset command
Sector Unprotect complete
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Table 11. DC Characteristics
(Ta = 0C to 70C or - 40C to 85C; VCC = 2.7-3.6V)
Symbol ILI ILO ICC1
Parameter Input Leakage Current Output Leakage Current Supply Current (read) CMOS Byte (read) CMOS Word Supply Current (Standby - TTL)
Test Conditions 0V VIN Vcc 0V VOUT Vcc CE# = VIL ; OE# = VIH ; f = 5MHZ CE# = VIH, BYTE# = RESET# = Vcc 0.3V (Note 1) CE# = BYTE# = RESET# = Vcc 0.3V (Note 1) Byte program, Sector or Chip Erase in progress
Min
Typ
Max 5 5
Unit A A mA mA mA
9 9 0.4
16 16 1.0
ICC2 (Standby - CMOS) ICC3 VIL VIH VOL VOH VID IID VLKO Supply Current (Program or Erase) Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage TTL Output High Voltage CMOS A9 Voltage (Electronic Signature) A9 Current (Electronic Signature) Supply voltage (Erase and Program lock-out)
1 20 -0.5 0.7 x Vcc
5.0 30 0.8 Vcc 0.3 0.45
A mA V V V V V
IOL = 4.0 mA IOH = -2.0 mA IOH = -100 A, A9 = VID 2.3 0.85 x Vcc Vcc 0.4V 10.5
11.5 100 2.5
V A V
Notes
1. BYTE# pin can also be GND 0.3V. BYTE# and RESET# pin input buffers are always enabled so that they draw power if not at full CMOS supply voltages.
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Test Conditions
3.3 V
2.7 k
Device Under Test
CL
6.2 k
Note: Diodes are IN3064 or equivalent
Test Specifications
Test Conditions Output Load Output Load Capacitance, CL Input Rise and Fall times Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels 30 5 0.0-3.0 1.5 1.5 -70 -90 1 TTL Gate 100 5 0.0-3.0 1.5 1.5 pF ns V V V Unit
AC CHARACTERISTICS Hardware Reset (Reset#)
Parameter Std tREADY tREADY tRP tRH Description Reset# Pin Low to Read or Write Embedded Algorithms Reset# Pin Low to Read or Write Non Embedded Algorithms Reset# Pulse Width Reset# High Time Before Read Test Setup Max Max Min Min Speed options -70 -90 20 500 500 50 Unit s nS nS nS
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Reset# Timings
RY/BY#
0V
CE# OE#
tRH
RESET#
tRP tREADY
Reset Timings NOT During Automatic Algorithms
RY/BY#
tREADY
CE# OE#
RESET#
tRP tRH
Reset Timings During Automatic Algorithms
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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AC CHARACTERISTICS Word / Byte Configuration (Byte#)
Std Parameter tBCS tCBH tRBH Speed Description Byte# to CE# switching setup time CE# to Byte# switching hold time RY/BY# to Byte# switching hold time Min Min Min -70 0 0 0 -90 0 0 0 Unit ns ns ns
CE
OE
Byte tBCS tCBH
Byte timings for Read Operations
CE
WE
Byte tBCS tRBH
RY/BY
Byte timings for Write Operations
Note: Switching BYTE# pin not allowed during embedded operations
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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Table 12. AC CHARACTERISTICS Read-only Operations Characteristics
Parameter Symbols JEDEC Standard Test Setup Min Speed Options -70 70 70 70 30 20 20 0 -90 90 90 90 35 20 20 0 Unit ns ns ns ns ns ns ns
Description Read Cycle Time Address to Output Delay Chip Enable To Output Delay Output Enable to Output Delay Chip Enable to Output High Z Output Enable to Output High Z Output Hold Time from Addresses, CE or OE , whichever occurs first
tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX
Notes: For - 70
tRC tACC tCE tOE tDF tDF tOH
CE = VIL OE = VIL
Max Max Max Max Max Min
OE = VIL
Vcc = 3.0V 5% Output Load : 1 TTL gate and 30pF Input Rise and Fall Times: 5ns Input Rise Levels: 0.0 V to 3.0 V Timing Measurement Reference Level, Input and Output: 1.5 V Vcc = 2.7V - 3.6V Output Load: 1 TTL gate and 100 pF Input Rise and Fall Times: 5 ns Input Pulse Levels: 0.45 V to .8 x Vcc Timing Measurement Reference Level, Input and Output: 0.8 V and .7 x Vcc
For all others:
tRC
Addresses CE# OE#
Addresses Stable
tACC tDF tOE tOEH
WE# Outputs Reset# RY/BY#
tCE
Output Valid
tOH
HIGH Z
0V
Figure 5. AC Waveforms for READ Operations
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Table 13. AC CHARACTERISTICS Write (Erase/Program) Operations
Parameter Symbols JEDEC Standard Description Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Output Enable Hold Time Read Toggle and DATA Polling Read Recovery Time before Min Min Min Min Min Min MIn Min Min Min Min Min Min Typ Max Speed Options -70 70 0 45 30 0 0 0 10 0 0 0 45 20 8 300 0.5 10 17.5 -90 90 0 45 45 0 0 0 10 0 0 0 45 20 8 300 0.5 10 17.5 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns s s s s s s 50 500 50 500 s ns
tAVAV tAVWL tWLAX tDVWH tWHDX
tWC tAS tAH tDS tDH tOES tOEH
tGHWL tELWL tWHEH tWLWH tWHDL tWHWH1
tGHWL tCS tCH tWP tWPH tWHWH1
Write ( OE High to W E Low)
CE SetupTime
CE Hold Time
Write Pulse Width Write Pulse Width High Programming Operation (Word AND Byte Mode)
tWHWH2 tWHWH3
tWHWH2 tWHWH3 tVCS tVIDR
Typ Sector Erase Operation Max Typ Chip Erase Operation Vcc Setup Time Rise Time to VID Max Min Min
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EN29LV160
Table 14. AC CHARACTERISTICS Write (Erase/Program) Operations Alternate CE Controlled Writes
Parameter Symbols JEDEC Standard Speed Options Description Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Output Enable Hold Time Read Min Min Min Min Min Min 0 10 Min Min Min Min Min Typ Max Typ Max -70 70 0 45 30 0 0 0 10 0 0 0 35 20 8 300 0.5 10 17.5 -90 90 0 45 45 0 0 0 10 0 0 0 45 20 8 300 0.5 10 17.5 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns s s s s s s 50 500 50 500 s ns
tAVAV tAVEL tELAX tDVEH tEHDX
tWC tAS tAH tDS tDH tOES tOEH
tGHEL tWLEL tEHWH tELEH tEHEL
tGHEL tWS tWH tCP tCPH
Toggle and Data Polling Read Recovery Time before Write ( OE High to CE Low)
W E SetupTime W E Hold Time
Write Pulse Width Write Pulse Width High Programming Operation (Byte AND word mode) Sector Erase Operation
tWHWH1 tWHWH1 tWHWH2 tWHWH2 tWHWH3 tWHWH3 tVCS tVIDR
Chip Erase Operation
Typ Max
Vcc Setup Time Rise Time to VID
Min Min
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
Table 15. ERASE AND PROGRAMMING PERFORMANCE
Parameter Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time Byte Word Typ 0.5 17.5 8 8 16.8 8.4 100K 300 300 50.4 25.2 Limits Max 10 Unit sec sec s s sec cycles Minimum 100K cycles Excludes system level overhead Comments Excludes 00H programming prior to erasure
Erase/Program Endurance
Table 16. LATCH UP CHARACTERISTICS
Parameter Description Input voltage with respect to Vss on all pins except I/O pins (including A9, Reset and OE ) Input voltage with respect to Vss on all I/O Pins Vcc Current Min -1.0 V -1.0 V -100 mA Max 12.0 V Vcc + 1.0 V 100 mA
Note : These are latch up characteristics and the device should never be put under these conditions. Refer to Absolute Maximum ratings for the actual operating limits. Table 17. 48-PIN TSOP PIN CAPACITANCE @ 25C, 1.0MHz
Parameter Symbol CIN COUT CIN2 Parameter Description Input Capacitance Output Capacitance Control Pin Capacitance Test Setup VIN = 0 VOUT = 0 VIN = 0 Typ 6 8.5 7.5 Max 7.5 12 9 Unit pF pF pF
Table 18. DATA RETENTION
Parameter Description Minimum Pattern Data Retention Time Test Conditions 150C 125C Min 10 20 Unit Years Years
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160 AC CHARACTERISTICS
Figure 6. AC Waveforms for Chip/Sector Erase Operations Timings
Erase Command Sequence (last 2 cycles) tWC tAS tAH Read Status Data (last two cycles)
Addresses
0x2AA
SA
0x555 for chip erase
VA
VA
CE#
tGHWL
OE#
tWP
tCH
WE#
tCS
tWPH tWHWH2 or tWHWH3
Data
0x55
tDS tDH
0x30
tBUSY
Status
DOUT
tRB
RY/BY#
VCC
tVCS
Notes: 1. SA=Sector Address (for sector erase), VA=Valid Address for reading status, Dout=true data at read address. 2. Vcc shown only to illustrate tvcs measurement references. It cannot occur as shown during a valid command sequence.
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
Figure 7. Program Operation Timings
Program Command Sequence (last 2 cycles) tWC tAS tAH Program Command Sequence (last 2 cycles)
Addresses CE#
0x555
PA
PA
PA
tGHWL
OE#
tWP
tCH
WE#
tCS
tWPH tWHWH1
OxA0
Data
tDS
PD
Status
DOUT
tRB
tDH
tBUSY
RY/BY#
tVCS
VCC
Notes: 1. PA=Program Address, PD=Program Data, DOUT is the true data at the program address. 2. VCC shown in order to illustrate tVCS measurement references. It cannot occur as shown during a valid command sequence.
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
Figure 8. AC Waveforms for /DATA Polling During Embedded Algorithm Operations
tRC
Addresses
tCH
VA tACC tCE
VA
VA
CE#
tOE
OE#
tOEH
tDF
WE#
tOH
DQ[7]
Complement
Complement
True
Valid Data
DQ[6:0]
tBUSY
Status Data
Status Data
True
Valid Data
RY/BY#
Notes: 1. VA=Valid Address for reading Data# Polling status data 2. This diagram shows the first status cycle after the command sequence, the last status read cycle and the array data read cycle.
Figure 9. AC Waveforms for Toggle Bit During Embedded Algorithm Operations
tRC
Addresses
tCH
VA
tACC tCE
VA
VA
VA
CE#
tOE
OE#
tOEH
tDF
WE#
tOH
DQ6, DQ2
tBUSY
Valid Status (first read)
Valid Status (second d)
Valid Status (stops toggling)
Valid Data
RY/BY#
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
Figure 10. Alternate CE# Controlled Write Operation Timings
0x555 for Program 0x2AA for Erase PA for Program SA for Sector Erase 0x555 for Chip Erase
Addresses tWC WE# tGHEL OE# tWS CE# tDS Data
0xA0 for Program
PD for Program 0x30 for Sector Erase 0x10 for Chip Erase
VA
tAS
tAH
tWH tCP
tCPH
tCWHWH1 / tCWHWH2 / tCWHWH3
tDH
tBUSY Status DOUT
RY/BY# tRH Reset#
Notes: PA = address of the memory location to be programmed. PD = data to be programmed at byte address. VA = Valid Address for reading program or erase status Dout = array data read at VA Shown above are the last two cycles of the program or erase command sequence and the last status read cycle Reset# shown to illustrate tRH measurement references. It cannot occur as shown during a valid command sequence.
Figure 11. DQ2 vs. DQ6
Enter Embedded Erase Erase Suspend Enter Erase Suspend Program Enter Suspend Read Enter Suspend Program Erase Resume
WE#
Erase
Erase Suspend Read
Erase
Erase Complete
DQ6
DQ2
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
Temporary Sector Unprotect
Parameter Std tVIDR tRSP Description VID Rise and Fall Time RESET# Setup Time for Temporary Sector Unprotect Min Min Speed Option -70 -90 500 4 Unit Ns
s
Figure 12. Temporary Sector Unprotect Timing Diagram
VID
RESET#
0 or 3 V
0 or 3 V tVIDR tVIDR
CE#
WE# tRSP
RY/BY#
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
Figure 13. Sector Protect/Unprotect Timing Diagram
VID
RESET#
Vcc 0V 0V
tVIDR
tVIDR
SA, A6,A1,A0 Data 60h
Valid 60h
Valid 40h Verify >0.4S
Valid Status
Sector Protect/Unprotect CE# WE# >1S OE#
Sector Protect: 150 uS Sector Unprotect: 15 mS
Notes: Use standard microprocessor timings for this device for read and write cycles. For Sector Protect, use A6=0, A1=1, A0=0. For Sector Unprotect, use A6=1, A1=1, A0=0.
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
FIGURE 14. TSOP 12mm x 20mm
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
41
(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
FIGURE 15. 48TFBGA package outline
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
ABSOLUTE MAXIMUM RATINGS
Parameter Storage Temperature Plastic Packages Ambient Temperature With Power Applied Output Short Circuit Current1 A9, OE#, Reset# 2 Voltage with Respect to Ground All other pins 3 Value -65 to +125 -65 to +125 -55 to +125 200 -0.5 to +11.5 -0.5 to Vcc+0.5 Unit C C C MA V V
Vcc
-0.5 to +4.0
V
Notes: 1. No more than one output shorted at a time. Duration of the short circuit should not be greater than one second. 2. Minimum DC input voltage on A9, OE#, RESET# pins is -0.5V. During voltage transitions, A9, OE#, RESET# pins may undershoot Vss to -1.0V for periods of up to 50ns and to -2.0V for periods of up to 20ns. See figure below. Maximum DC input voltage on A9, OE#, and RESET# is 11.5V which may overshoot to 12.5V for periods up to 20ns. 3. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, inputs may undershoot Vss to -1.0V for periods of up to 50ns and to -2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is Vcc + 0.5 V. During voltage transitions, outputs may overshoot to Vcc + 1.5 V for periods up to 20ns. See figure below. 4. Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress rating only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the device to the maximum rating values for extended periods of time may adversely affect the device reliability.
RECOMMENDED OPERATING RANGES1
Parameter Ambient Operating Temperature Commercial Devices Industrial Devices Operating Supply Voltage Vcc Value 0 to 70 -40 to 85 Regulated Voltage Range: 3.0-3.6V Full Voltage Range: 2.7 to 3.6V Unit C
V
1.
Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed.
Vcc +1.5V
Maximum Negative Overshoot Waveform
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Maximum Positive Overshoot Waveform 43
(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
ORDERING INFORMATION
EN29LV160 T70 T C P PACKAGING CONTENT (Blank) = Conventional P = Pb Free TEMPERATURE RANGE (Blank) = Commercial (0C to +70C) I = Industrial (-40C to +85C) PACKAGE T = 48-pin TSOP B = 48-Ball Fine Pitch Ball Grid Array (FBGA) 0.80mm pitch, 6mm x 8mm package SPEED 70 = 70ns 90 = 90ns BOOT CODE SECTOR ARCHITECTURE T = Top boot Sector B = Bottom boot Sector BASE PART NUMBER EN = EON Silicon Solution Inc. 29LV = FLASH, 3V Read Program Erase 160 = 16 Megabit (2M x 8 / 1M x 16)
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
EN29LV160
Revisions List
Revision No A Description Preliminary draft Date 3/30/2004
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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(c)2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30

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